| 词条 | Simon Sze |
| 释义 |
Dr. Simon Min Sze ({{zh|c=施敏|p=Shī Mĭn}}; born 1936) is a Chinese-American electrical engineer. Sze was born in Nanjing, China and grew up in Taiwan. After graduating from the National Taiwan University in 1957, he received a master's degree from the University of Washington in 1960 and a doctorate from Stanford University in 1963. He worked for Bell Labs until 1990, after which he returned to Taiwan and joined the faculty of National Chiao Tung University. He is well known for his work in semiconductor physics and technology, including his discovery with Dawon Kahng of the floating-gate transistor,[1] now widely used in non-volatile semiconductor memory devices. He has written and edited many books, including Physics of Semiconductor Devices, one of the most-cited texts in its field. Sze received the J J Ebers Award in 1991 for his work in electron devices.[2] Bibliography
References1. ^D. Kahng and S. M. Sze, A floating-gate and its application to memory devices, The Bell System Technical Journal, 46, #4 (1967), pp. 1288–1295. {{Authority control}}{{DEFAULTSORT:Sze, Simon}}{{US-engineer-stub}}2. ^Electron Devices Society J.J. Ebers Award, web page at the IEEE, accessed 11-I-2007. 15 : 1936 births|American electrical engineers|Living people|American people of Taiwanese descent|National Taiwan University alumni|Scientists at Bell Labs|American people of Chinese descent|Members of the United States National Academy of Engineering|Chinese inventors|Engineers from Jiangsu|Taiwanese people from Jiangsu|Scientists from Nanjing|University of Washington alumni|Stanford University alumni|National Chiao Tung University faculty |
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