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词条 Stanene
释义

  1. Synthesis

  2. Reactivity

  3. References

  4. External links

{{Distinguish|Stanine}}Stanene[2][3][4] is a 2D material and a 2D topological insulator. It is composed of tin atoms arranged in a single, hexagonal layer, in a manner similar to graphene. Its name combines stannum (the Latin name for tin) with the suffix -ene used by graphene.[5]

Stanene was theoretically predicted to be a 2D topological insulator in 2011,[6] and its functionalized derivations as topological insulators were predicted in 2013.[7] Both may display dissipationless superconductive currents at their edges near room temperature. The addition of fluorine atoms to the tin lattice could extend the operating temperature up to 100 °C.[8] This would make it practical for use in integrated circuits to make smaller, faster and more energy efficient computers.

Synthesis

The synthesis and study of optical properties of stanene was first claimed by researchers at the Indian Institute of Technology Bombay.[9] Stanene synthesis was reported by a second group in 2015, using molecular beam epitaxy on a substrate of bismuth telluride.[10][11] Theoretical research suggested Ag(111) surface may be a good substrate to grow stanene epitaxially.[12] In 2018 the growth of epitaxial 2D stanene on a Ag(111) single crystal template was reported.[13]

Reactivity

First principle calculations have predicted that stanene is very reactive against common air pollutants such as NOx and COx and is able to trap and dissociate them at low temperatures.[14]

References

1. ^{{cite journal|doi=10.1038/srep31073|pmid=27492139|pmc=4974617|title=Stanene: Atomically Thick Free-standing Layer of 2D Hexagonal Tin|journal=Scientific Reports|volume=6|pages=31073|year=2016|last1=Saxena|first1=Sumit|last2=Chaudhary|first2=Raghvendra Pratap|last3=Shukla|first3=Shobha|bibcode=2016NatSR...631073S|arxiv=1505.05062}}
2. ^{{cite journal|last1=Garcia|first1=J. C.|last2=de Lima|first2=D. B.|last3=Assali|first3=L. V. C.|last4=Justo|first4=J. F.|title=Group IV graphene- and graphane-like nanosheets|journal=J. Phys. Chem. C|date=2011|volume=115|issue=27|pages=13242–13246|doi=10.1021/jp203657w|arxiv=1204.2875}}
3. ^{{cite web|url=https://www.sciencedaily.com/releases/2013/11/131121135635.htm |title=Will 2-D tin be the next super material? |author = DOE/SLAC National Accelerator Laboratory |publisher=Sciencedaily.com |date=2013-11-21 |accessdate=2014-01-10}}
4. ^{{cite web|url=http://phys.org/news/2013-11-d-tin-super-material.html |title=Will 2-D tin be the next super material? |publisher=Phys.org |date=21 November 2013 |accessdate=2014-01-10}}
5. ^{{cite news | first = Ritu | last = Singh | url = http://zeenews.india.com/news/science/tin-could-be-the-next-super-material-for-computer-chips_892199.html | title = Tin could be the next super material for computer chips | work = Zeenews | date = November 24, 2013 }}
6. ^{{Cite journal | last1 = Liu | first1 =Cheng-Cheng | last2 =Jiang | first2 = Hua | last3 =Yao | first3 = Yugui | year = 2011 | title = Low-energy effective Hamiltonian involving spin-orbit coupling in silicene and two-dimensional germanium and tin | journal = Phys. Rev. B | volume = 19 | issue = 84 | pages = 195430 | publisher = Phys. Rev. B | jstor = | doi = 10.1103/PhysRevB.84.195430 | bibcode =2011PhRvB..84s5430L | arxiv =1108.2933 }}
7. ^{{Cite journal | last1 = Xu | first1 = Y. | last2 = Yan | first2 = B. | last3 = Zhang | first3 = H. J. | last4 = Wang | first4 = J. | last5 = Xu | first5 = G. | last6 = Tang | first6 = P. | last7 = Duan | first7 = W. | last8 = Zhang | first8 = S. C. | doi = 10.1103/PhysRevLett.111.136804 | title = Large-Gap Quantum Spin Hall Insulators in Tin Films | journal = Physical Review Letters | volume = 111 | issue = 13 | year = 2013 | pmid = 24116803| pmc = | bibcode=2013PhRvL.111m6804X | page=136804| arxiv = 1306.3008 }}
8. ^{{cite press release | url = https://www6.slac.stanford.edu/news/2013-11-21-tin-super-material-stanene.aspx | title = Will 2-D Tin be the Next Super Material? | publisher = SLAC National Accelerator Laboratory | location = Stanford University | date = November 21, 2013 }}
9. ^{{citation | arxiv=1505.05062| title = Stanene: Atomically Thick Free-standing Layer of 2D Hexagonal Tin | journal = Scientific Reports | volume = 6 | pages = 31073 | date = May 20, 2015| bibcode = 2016NatSR...631073S | author1 = Saxena | first1 = Sumit | last2 = Chaudhary | first2 = Raghvendra Pratap | last3 = Shukla | first3 = Shobha | doi = 10.1038/srep31073 | pmid=27492139 | pmc=4974617}}
10. ^{{cite journal | last1 = Cesare | first1 = Chris | year = 2015 | title = Physicists announce graphene's latest cousin: stanene | url = | journal = Nature News | volume = 524| issue = 7563| pages = 18| doi = 10.1038/nature.2015.18113 | pmid = 26245561 | bibcode = 2015Natur.524R..18C }}
11. ^{{cite journal | last1 = Feng-feng Zhu | first1 = Wei-jiong Chen | last2 = Xu | first2 = Yong | last3 = Chun-lei Gao | first3 = Dan-dan Guan | last4 = Can-hua | first4 = Liu | last5 = Qian | first5 = Dong | last6 = Zhang | first6 = Shou-Cheng | last7 = Jin-feng | first7 = Jia | year = 2015 | title = Epitaxial growth of two-dimensional stanene | url = | journal = Nature Materials | volume = 14| issue = 10| pages = 1020–1025| doi = 10.1038/nmat4384 | pmid = 26237127 | bibcode = 2015NatMa..14.1020Z | arxiv = 1506.01601 }}
12. ^{{cite journal | last1 = Gao | first1 = Junfeng | last2 = Zhang | first2 = Gang | last3 = Zhang | first3 = Yong-Wei | year = 2016 | title = Exploring Ag (111) Substrate for Epitaxially Growing Monolayer Stanene: A First-Principles Study | journal = Scientific Reports | volume = 6 | pages = 29107 | doi = 10.1038/srep29107 | pmid = 27373464 | pmc = 4931515 | bibcode = 2016NatSR...629107G }}
13. ^{{cite journal | last1 = Yuhara | first1 = Junji | last2 = Fujii | first2 = Yuya | last3 = Nishino | first3 = Kazuki | last4 = Isobe | first4 = Naoki | last5 = Nakatake | first5 = Masashi |last6 = Xian | first6 = Lede |last7 = Rubio | first7 = Angel | last8 = Le Lay | first8 = Guy |year = 2018 | title = Large area planar stanene epitaxially grown on Ag(1 1 1) | journal = 2D Materials | volume = 5 | issue = 2 | pages = 025002 | doi = 10.1088/2053-1583/aa9ea0| bibcode = 2018TDM.....5b5002Y }}
14. ^{{cite journal|last1=Takahashi|first1=L.|last2=Takahashi|first2=K. |title=Low temperature pollutant trapping and dissociation over two-dimensional tin|journal=Physical Chemistry Chemical Physics|date=2015|volume=17|issue=33|pages=21394–21396|doi=10.1039/C5CP03382A|pmid=26226204|bibcode=2015PCCP...1721394T}}

External links

{{Commons category|Stanene}}
  • {{cite news |url=https://www.scientificamerican.com/article/could-atomically-thin-tin-transform-electronics/ |title=Could Atomically Thin Tin Transform Electronics? |first=Charles Q. | last=Choi |date=December 4, 2013 |publisher=Scientific American}}
  • {{cite news |url=http://www.eetimes.com/document.asp?doc_id=1320283 |title=Stanene May Be Better Than Graphene |date=3 December 2013 |first=R. Colin |last=Johnson |publisher=EE Times}}
  • {{cite news |url=https://www.theregister.co.uk/2013/12/04/theoretical_material_promises_100_per_cent_electrical_efficiency_at_room_temperatures_and_above/ |title=OHM MY GOD! Move over graphene, here comes '100% PERFECT' stanene |date=4 December 2013 |first=Rik |last=Myslewski |publisher=The Register}}
  • {{cite web|url=http://www.gizmag.com/stanene-topological-insulator/29976/ |title=Tin-based stanene could conduct electricity with 100 percent efficiency |publisher=gizmag |date=2013-12-01 |accessdate=2013-12-05}}
  • {{cite web|url=http://www.stanford.edu/group/nnin-computing/Stanford_William_Vandenberghe-10252013.pdf |title=Quantum Transport for future Nano-CMOS Applications : TFETs and 2D topological insulators |first=William | last =Vandenberghe | publisher = University of Texas at Dallas |date=2013-10-25 |accessdate=2014-01-03}}

6 : Hypothetical chemical compounds|Superconductors|Tin chemistry|Two-dimensional nanomaterials|Monolayers|Substances discovered in 2010s
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