| 词条 | Ballistic collection transistor |
| 释义 |
The ballistic collection transistor is the bipolar transistor exhibiting a ballistic conduction resulting in significant velocity overshoot.[1] Initial demonstration of ballistic conduction in gallium arsenide was done in 1985 by IBM researchers.[2] The amplifier with 40 GHz bandwidth based on heterojunction bipolar transistor gallium arsenide technology implementing ballistic collection transistors was developed in 1994 by Nippon Telegraph and Telephone researchers.[3] See also
References1. ^{{cite book|last1=Chang|first1=M F|last2=Ishibashi|first2=T|title=Current Trends In Heterojunction Bipolar Transistors|publisher=World Scientific Publishing Co. Pte.|isbn=978-981-02-2097-6|page=126–129|year=1996}} 2. ^{{cite journal|last1=Nathan|first1=M. I.|last2=Heiblum|first2=M.|title=A gallium arsenide ballistic transistor?|journal=IEEE Spectrum|date=February 1986|volume=23|issue=2|page=45–47|doi=10.1109/MSPEC.1986.6371000|url=http://ieeexplore.ieee.org/document/6371000/|accessdate=9 March 2018}} 3. ^{{cite journal|last1=Ishibashi|first1=T.|last2=Yamauchi|first2=Y.|last3=Sano|first3=E.|last4=Nakajima|first4=H.|last5=Matsuoka|first5=Y.|title=BALLISTIC COLLECTION TRANSISTORS AND THEIR APPLICATIONS|journal=International Journal of High Speed Electronics and Systems|date=September 1994|volume=5|issue=3|page=349|doi=10.1142/S0129156494000152}} 3 : Electronics stubs|Nanoelectronics|Transistor types |
| 随便看 |
|
开放百科全书收录14589846条英语、德语、日语等多语种百科知识，基本涵盖了大多数领域的百科知识，是一部内容自由、开放的电子版国际百科全书。