| 词条 | Germanium-tin |
| 释义 |
Germanium-tin is an alloy of the elements germanium and tin, both located in group 14 of the periodic table. It is only thermodynamically stable under a small composition range. Despite this limitation, it has useful properties for band gap and strain engineering of silicon integrated optoelectronic and microelectronic semiconductor devices. SynthesisGermanium-tin alloys must be kinetically stabilized in order to prevent decomposition.[1] [2]Therefore, low temperature molecular beam epitaxy or chemical vapor deposition techniques are typically used for their synthesis.[1] Microelectronic ApplicationsGermanium-tin alloys have higher carrier mobilities than either silicon or germanium. Therefore it has been proposed that they can be used as a channel material in high speed metal-oxide-semiconductor field effect transistors.[3] In addition, the alloys' larger lattice constant relative to germanium makes it possible to use them as stressors to enhance the carrier mobility of germanium channel transistors.[3][4] Optoelectronic ApplicationsAt a Sn content beyond approximately 9%, germanium-tin alloys become direct gap semiconductors having efficient light emission suitable for the fabrication of lasers.[5] Since the constituent elements are chemically compatible with silicon, it is possible to integrate such lasers directly onto silicon microelectronic devices, enabling on-chip optical communication. This is still an active research area, but germanium-tin lasers operating at low temperatures have already been demonstrated.[6][7] In addition, germanium-tin light emitting diodes operating at room temperature have also been reported.[8][9] References1. ^1 Wirths S, Buca D and Mantl S 2016 Si–Ge–Sn alloys: From growth to applications Prog. Cryst. Growth Charact. Mater. 62 1–39 2. ^Kouvetakis J, Menendez J and Chizmeshya A V G 2006 Tin-Based Group IV Semiconductors: New Platforms for Opto- and Microelectronics on Silicon Annu. Rev. Mater. Res. 36 497–554 3. ^1 Loo R, Vincent B, Gencarelli F, Merckling C, Kumar A, Eneman G, Witters L, Vandervorst W, Caymax M, Heyns M and Thean A 2013 Ge1-xSnx Materials: Challenges and Applications ECS J. Solid State Sci. Technol. 2 N35–40 4. ^Vincent B, Shimura Y, Takeuchi S, Nishimura T, Eneman G, Firrincieli a., Demeulemeester J, Vantomme a., Clarysse T, Nakatsuka O, Zaima S, Dekoster J, Caymax M and Loo R 2011 Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors Microelectron. Eng. 88 342–6 5. ^Gallagher J D, Senaratne C L, Kouvetakis J and Menéndez J 2014 Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1−ySny alloys Appl. Phys. Lett. 105 142102 6. ^Scientists construct the first germanium-tin semiconductor laser for silicon chips: http://phys.org/news/2015-01-scientists-germanium-tin-semiconductor-laser-silicon.html 7. ^The Germanium-Tin Laser: Answer to the On-Chip Data Bottleneck?: http://spectrum.ieee.org/tech-talk/semiconductors/optoelectronics/germaniumtin-laser-for-optical-interconnects 8. ^Gallagher J D, Senaratne C L, Sims P, Aoki T, Menéndez J and Kouvetakis J 2015 Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition Appl. Phys. Lett. 106 091103 9. ^Senaratne C L, Wallace P M, Gallagher J D, Sims P E, Kouvetakis J and Menéndez J 2016 Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes J. Appl. Phys. 120 025701 2 : Germanium|Tin alloys |
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