| 词条 | Ion implantation-induced nanoparticle formation |
| 释义 |
Ion implantationIon Implantation is a technique extensively used in the field of materials science for material modification. The effect it has on nanomaterials allows manipulation of mechanical, electronic, morphological and optical properties.[1]One-dimensional nano-materials are an important contributor to the creation of nano-devices i.e. field effect transistors, nanogenerators and solar cells. The offer the potential of high integration density, lower power consumption, higher speed and super high frequency. The effects of ion implantation varies according to multiple variables. Collision cascade may occur during implantation and this causes of interstitials and vacancies in target materials (although these defects may be mitigated through dynamic annealing). Collision modes are nuclear collision, electron collision and charge exchange. Another process is the sputtering effect, which significantly affects the morphology and shape of nano-materials. References1. ^{{cite journal|url=https://www.researchgate.net/publication/236223800|title=The ion implantation-induced properties of one-dimensional nanomaterials|first1=Wen|last1=Qing Li|first2=Xiangheng|last2=Xiao|first3=Andrey|last3=Stepanov|first4=Zhigao|last4=Dai|first5=Wei|last5=wu|first6=Guang|last6=Xu Cai|first7=Feng|last7=Ren|first8=C|last8=Jiang|date=17 April 2013|journal=Nanoscale Research Letters|volume=8|issue=1|pages=175|accessdate=19 April 2018|via=ResearchGate|doi=10.1186/1556-276X-8-175|pmid=23594476|pmc=3668221}} {{nano-tech-stub}} 3 : Materials science|Nanotechnology|Semiconductor fabrication materials |
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