| 词条 | Metal–nitride–oxide–semiconductor transistor |
| 释义 |
The metal–nitride–oxide–semiconductor or metal–nitride–oxide–silicon (MNOS) transistor is an alternative and supplement to the existing MOS technology, wherein the insulation employed is a nitride-oxide layer.[1][2] It is used in non-volatile computer memories.[3] See also
References1. ^{{cite journal|last1=Frohman-Bentchkowsky|first1=D.|title=The metal-nitride-oxide-silicon (MNOS) transistor—Characteristics and applications|journal=Proceedings of the IEEE|date=1970|volume=58|issue=8|pages=1207–1219|doi=10.1109/PROC.1970.7897}} {{DEFAULTSORT:Metal-nitride-oxide-semiconductor transistor}}{{computing-stub}}2. ^{{cite web|title=Metal–nitride–oxide–semiconductor (MNOS) technology|url=https://www.jedec.org/standards-documents/dictionary/terms/metal-nitride-oxide-semiconductor-mnos-technology|publisher=JEDEC}} 3. ^{{cite book|last1=Ng|first1=Kwok K.|title=Complete Guide to Semiconductor Devices|publisher=John Wiley & Sons, Inc.|isbn=9781118014769|pages=353–360|language=en|chapter=Metal-Nitride-Oxide Semiconductor Transistor|doi=10.1002/9781118014769.ch47|year=2010}} 2 : Transistor types|FETs |
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