请输入您要查询的百科知识：

　

词条 Gummel–Poon model
释义

  1. Model parameters

  2. See also

  3. References

  4. External links

The Gummel–Poon model is a model of the bipolar junction transistor. It was first described in a paper published by Hermann Gummel and H. C. Poon at Bell Labs in 1970.[1]

The Gummel–Poon model and modern variants of it are widely used via incorporation in the popular circuit simulators such as SPICE. A significant effect that the Gummel–Poon model accounts for is the variation of the transistors' and values with the direct current level. When certain parameters are omitted, the Gummel–Poon model reduces to the simpler Ebers–Moll model.[1]

Model parameters

Spice Gummel–Poon model parameters

#NameProperty
Modeled		ParameterUnitsDefault
Value
1IScurrenttransport saturation currentA1.00E-016
2BFcurrentideal max forward beta-100
3NFcurrentforward current emission coefficient-1
4VAFcurrentforward Early voltageVinf
5IKFcurrentcorner for forward beta high current roll-offAinf
6ISEcurrentB-E leakage saturation currentA0
7NEcurrentB-E leakage emission coefficient-1.5
8BRcurrentideal max reverse beta-1
9NRcurrentreverse current emission coefficient-1
10VARcurrentreverse Early voltageVinf
11IKRcurrentcorner for reverse beta high current roll-offAinf
12ISCcurrentB-C leakage saturation currentA0
13NCcurrentB-C leakage emission coefficient-2
14RBresistancezero-bias base resistanceohms0
15IRBresistancecurrent where base resistance falls half-way to its minimumAinf
16RBMresistanceminimum base resistance at high currentsohmsRB
17REresistanceemitter resistanceohms0
18RCresistancecollector resistanceohms0
19CJEcapacitanceB-E zero-bias depletion capacitanceF0
20VJEcapacitanceB-E built-in potentialV0.75
21MJEcapacitanceB-E junction exponential factor-0.33
22TFcapacitanceideal forward transit times0
23XTFcapacitancecoefficient for bias dependence of TF-0
24VTFcapacitancevoltage describing VBC dependence of TFVinf
25ITFcapacitancehigh-current parameter for effect on TFA0
26PTFexcess phase at freq=1.0/(TF*2PI) Hzdeg0
27CJCcapacitanceB-C zero-bias depletion capacitanceF0
28VJCcapacitanceB-C built-in potentialV0.75
29MJCcapacitanceB-C junction exponential factor-0.33
30XCJCcapacitancefraction of B-C depletion capacitance connected to internal base node-1
31TRcapacitanceideal reverse transit times0
32CJScapacitancezero-bias collector-substrate capacitanceF0
33VJScapacitancesubstrate junction built-in potentialV0.75
34MJScapacitancesubstrate junction exponential factor-0
35XTBforward and reverse beta temperature exponent-0
36EGenergy gap for temperature effect of ISeV1.1
37XTItemperature exponent for effect of IS-3
38KFflicker-noise coefficient-0
39AFflicker-noise exponent-1
40FCcoefficient for forward-bias depletion capacitance formula-0.5
41TNOMparameter measurement temperaturedeg.C27
[2]

See also

  • Gummel plot

References

1. ^1 H. K. Gummel and H. C. Poon, "An integral charge control model of bipolar transistors", Bell Syst. Tech. J., vol. 49, pp. 827–852, May–June 1970
2. ^[https://web.archive.org/web/20090201102947/http://virtual.cvut.cz/dynlabmodules/ihtml/dynlabmodules/semicond/node48.html Summary of model with schematics and equations]

External links

  • [https://archive.org/details/bstj49-5-827 Bell System Technical Journal, v49: i5 May-June 1970 on archive.org]
  • Designers-Guide.org comparison paper Xiaochong Cao, J. McMacken, K. Stiles, P. Layman, Juin J. Liou, Adelmo Ortiz-Conde, and S. Moinian, "Comparison of the New VBIC and Conventional Gummel–Poon Bipolar Transistor Models," IEEE Trans-ED 47 #2, Feb. 2000.
{{DEFAULTSORT:Gummel-Poon model}}Ersatzschaltungen des Bipolartransistors#Gummel-Poon-Modell

1 : Transistor modeling
随便看

　

开放百科全书收录14589846条英语、德语、日语等多语种百科知识，基本涵盖了大多数领域的百科知识，是一部内容自由、开放的电子版国际百科全书。

　

Copyright © 2023 OENC.NET All Rights Reserved
京ICP备2021023879号 更新时间：2024/11/11 0:37:21