请输入您要查询的百科知识：

　

词条 Indium(III) oxide
释义

  1. Physical properties

     Crystal structure  Conductivity and magnetism 

  2. Synthesis

  3. Reactions

  4. Applications

  5. See also

  6. References

{{chembox
| Watchedfields = changed
| verifiedrevid = 477001036
| Name = Indium(III) oxide
| ImageFile = Kristallstruktur Indiumoxid.png
| OtherNames = indium trioxide, indium sesquioxide
|Section1={{Chembox Identifiers
| ChemSpiderID_Ref = {{chemspidercite|correct|chemspider}}
| ChemSpiderID = 133007
| PubChem = 150905
| InChI = 1/2In.3O/q2*+3;3*-2
| SMILES = [O-2].[O-2].[O-2].[In+3].[In+3]
| InChIKey = PJXISJQVUVHSOJ-UHFFFAOYAL
| StdInChI_Ref = {{stdinchicite|correct|chemspider}}
| StdInChI = 1S/2In.3O/q2*+3;3*-2
| StdInChIKey_Ref = {{stdinchicite|correct|chemspider}}
| StdInChIKey = PJXISJQVUVHSOJ-UHFFFAOYSA-N
| CASNo_Ref = {{cascite|correct|CAS}}
| CASNo = 1312-43-2
|Section2={{Chembox Properties
| Formula = In2O3
| MolarMass = 277.64 g/mol
| Appearance = yellowish green odorless crystals
| Density = 7.179 g/cm3
| Solubility = insoluble
| BandGap = ~3 eV (300 K)
| MeltingPtC = 1910
| BoilingPt =
| MagSus = −56.0·10−6 cm3/mol
|Section3={{Chembox Structure
| CrystalStruct =Cubic, space group Ia{{overline|3}} No. 206, cI80, a = 1.0117(1) nm, Z = 16[1]
| Coordination =
| MolShape = }}
|Section7={{Chembox Hazards
| EUClass = not listed
| NFPA-H = 1
| NFPA-F = 0
| NFPA-R = 0
}}

Indium(III) oxide (In2O3) is a chemical compound, an amphoteric oxide of indium.

Physical properties

Crystal structure

Amorphous indium oxide is insoluble in water but soluble in acids, whereas crystalline indium oxide is insoluble in both water and acids. The crystalline form exist in two phases, the cubic (bixbyite type)[1] and rhombohedral (corundum type). Both phases have a band gap of about 3 eV.[2][3] The parameters of the cubic phase are listed in the infobox. The rhombohedral phase is produced at high temperatures and pressures or when using non-equilibrium growth methods.[4] It has a space group R{{overline|3}}c No. 167, Pearson symbol hR30, a = 0.5487 nm, b = 0.5487 nm, c = 0.57818 nm, Z = 6 and calculated density 7.31 g/cm3.[5]

Conductivity and magnetism

Thin films of chromium-doped indium oxide (In2−xCrxO3) are a magnetic semiconductor displaying high-temperature ferromagnetism, single-phase crystal structure, and semiconductor behavior with high concentration of charge carriers. It has possible applications in spintronics as a material for spin injectors.[6]

Thin polycrystalline films of indium oxide doped with Zn are highly conductive (conductivity ~105 S/m) and even superconductive at helium temperatures. The superconducting transition temperature Tc depends on the doping and film structure and is below 3.3 K.[7]

Synthesis

Bulk samples can be prepared by heating indium(III) hydroxide or the nitrate, carbonate or sulfate.[8]

Thin films of indium oxide can be prepared by sputtering of indium target in argon/oxygen atmosphere. They can be used as diffusion barriers ("barrier metals") in semiconductors, e.g. to inhibit diffusion between aluminium and silicon.[9]

Monocrystalline nanowires were synthetized from indium oxide by laser ablation, allowing precise diameter control down to 10 nm. Field effect transistors were fabricated from those.[10] Indium oxide nanowires can serve as sensitive and specific redox protein sensors.[11] Sol-gel method is another way to prepare the nanowires.

Indium oxide can serve as a semiconductor material, forming heterojunctions with p-InP, n-GaAs, n-Si, and other materials. A layer of indium oxide on a silicon substrate can be deposited from an indium trichloride solution, a method useful for manufacture of solar cells.[12]

Reactions

When heated to 700 °C Indium(III) oxide forms In2O, (called indium(I) oxide or indium suboxide), at 2000 °C it decomposes.[8]

It is soluble in acids but not in alkali.[8]

With ammonia at high temperature indium nitride is formed [13]

In2O3 + 2 NH3 → 2 InN + 3 H2O

With K2O and indium metal the compound K5InO4 containing tetrahedral InO45− ions was prepared.[14]

Reacting with a range of metal trioxides produced perovskites[15] for example:

In2O3 + Cr2O3 → 2 InCrO3

Applications

Indium oxide is used in some types of batteries, thin film infrared reflectors transparent for visible light (hot mirrors), some optical coatings, and some antistatic coatings. In combination with tin dioxide, indium oxide forms indium tin oxide (also called tin doped indium oxide or ITO), a material used for transparent conductive coatings.

In semiconductors, indium oxide can be used as an n-type semiconductor used as a resistive element in integrated circuits.[16]

In histology, indium oxide is used as a part of some stain formulations.

See also

  • Indium
  • Indium tin oxide
  • Magnetic semiconductor

References

1. ^1 {{cite journal|last1=Marezio|first1=M.|title=Refinement of the crystal structure of In2O3 at two wavelengths|journal=Acta Crystallographica|volume=20|issue=6|year=1966|pages=723–728|doi=10.1107/S0365110X66001749}}
2. ^{{cite journal|author=Walsh, A|title=Nature of the Band Gap of In2O3 Revealed by First-Principles Calculations and X-Ray Spectroscopy|pmid=18518246|display-authors=1|year=2008|last2=Da Silva|first2=JL|last3=Wei|first3=SH|last4=Körber|first4=C|last5=Klein|first5=A|last6=Piper|first6=LF|last7=Demasi|first7=A|last8=Smith|first8=KE|last9=Panaccione|first9=G|volume=100|issue=16|pages=167402|journal=Physical Review Letters|doi=10.1103/PhysRevLett.100.167402|url=http://people.bath.ac.uk/aw558/publications/2008/prl_in2o3_08.pdf}}
3. ^{{cite journal|last=King|title=Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3|doi=10.1103/PhysRevB.79.205211 |first=P. D. C. |display-authors=2 |year=2009 |last2=Fuchs |first2=F. |last3=Wang |first3=Ch. |last4=Payne |first4=D. |last5=Bourlange |first5=A. |last6=Zhang |first6=H. |last7=Bell |first7=G. |last8=Cimalla |first8=V. |last9=Ambacher |first9=O. |last10=Egdell |first10=R. |last11=Bechstedt |first11=F. |last12=McConville |first12=C. |journal=Physical Review B|volume=79|issue=20}}
4. ^{{cite book|author1=The Minerals Metals & Materials Society (Tms)|author2=The Minerals, Metals & Materials Society (TMS)|title=TMS 2011 140th Annual Meeting and Exhibition, General Paper Selections|url=https://books.google.com/books?id=2WKwuVASXjEC&pg=PA51|accessdate=23 September 2011|date=6 April 2011|publisher=John Wiley and Sons|isbn=978-1-118-06215-9|pages=51–}}
5. ^{{cite journal|doi=10.1021/ic50079a033|title=C rare earth oxide-corundum transition and crystal chemistry of oxides having the corundum structure|year=1969|last1=Prewitt|first1=Charles T.|last2=Shannon|first2=Robert D.|last3=Rogers|first3=Donald Burl|last4=Sleight|first4=Arthur W.|journal=Inorganic Chemistry|volume=8|issue=9|pages=1985–1993}}
6. ^{{cite journal|doi=10.2345/i0899-8205-40-4-267.1|url=http://news.mit.edu/2006/spintronics-0524|title=New Material Puts Its Own Spin on Electronics|journal=Biomedical Instrumentation & Technology|volume=40|issue=4|pages=267|year=2006}}
7. ^{{cite journal|doi=10.1088/1468-6996/9/4/044208 |pmid=27878025|title=Superconductivity in transparent zinc-doped In2O3 films having low carrier density|year=2008|last1=Makise|first1=Kazumasa|last2=Kokubo|first2=Nobuhito|last3=Takada|first3=Satoshi|last4=Yamaguti|first4=Takashi|last5=Ogura|first5=Syunsuke|last6=Yamada|first6=Kazumasa|last7=Shinozaki|first7=Bunjyu|last8=Yano|first8=Koki|last9=Inoue|first9=Kazuyoshi|last10=Nakamura|first10=Hiroaki|journal=Science and Technology of Advanced Materials|volume=9|issue=4|pages=044208|display-authors=8|pmc=5099639}}
8. ^1 2 {{Cite book| title = Chemistry of aluminium, gallium, indium, and thallium| author = Downs, Anthony John | publisher = Springer| year = 1993| isbn = 0-7514-0103-X}}
9. ^{{cite journal|url = http://authors.library.caltech.edu/2310/|title = Indium oxide diffusion barriers for Al/Si metallizations|author = Kolawa, E. and Garland, C. and Tran, L. and Nieh, C. W. and Molarius, J. M. and Flick, W. and Nicolet, M.-A. and Wei, J.|year = 1988|journal = Applied Physics Letters|volume = 53 |issue =26|pages = 2644–2646|doi = 10.1063/1.100541}}
10. ^{{cite journal|doi=10.1196/annals.1292.007|title=Synthesis, Electronic Properties, and Applications of Indium Oxide Nanowires|year=2003|last1=Li|first1=C|last2=Zhang|first2=D|last3=Han|first3=S|last4=Liu|first4=X|last5=Tang|first5=T|last6=Lei|first6=B|last7=Liu|first7=Z|last8=Zhou|first8=C|journal=Annals of the New York Academy of Sciences|volume=1006|pages=104–21|pmid=14976013}}
11. ^{{cite web|url = http://www.foresight.org/Conferences/MNT11/Abstracts/Rouhanizadeh/index.html| title = Applying Indium Oxide Nanowires as Sensitive and Specific Redox Protein Sensors|publisher = Foresight Nanotech Institute|accessdate = 2008-10-29}}
12. ^Feng, Tom and Ghosh, Amal K. (1984) "Method for forming indium oxide/n-silicon heterojunction solar cells" {{US Patent| 4436765}}
13. ^Wiberg, Egon and Holleman, Arnold Frederick (2001) Inorganic Chemistry, Elsevier {{ISBN|0123526515}}
14. ^{{cite journal|last1=Lulei|first1=M.|last2=Hoppe|first2=R.|title=Über "Orthoindate" der Alkalimetalle: Zur Kenntnis von K5[InO4]|journal=Zeitschrift für anorganische und allgemeine Chemie|volume=620|issue=2|year=1994|pages=210–224|doi=10.1002/zaac.19946200205}}
15. ^{{cite journal|last1=Shannon|first1=Robert D.|title=Synthesis of some new perovskites containing indium and thallium|journal=Inorganic Chemistry|volume=6|issue=8|year=1967|pages=1474–1478|issn=0020-1669|doi=10.1021/ic50054a009}}
16. ^{{cite web|url=http://www.ceramic-materials.com/cermat/oxide/in2o3.html|title = In2O3 (Indium Oxide)|publisher = CeramicMaterials.info|accessdate = 2008-10-29 |archiveurl = https://web.archive.org/web/20080630082830/http://ceramic-materials.com/cermat/oxide/in2o3.html |archivedate = 2008-06-30}}
{{Indium compounds}}{{Oxides}}{{oxygen compounds}}

4 : Oxides|Indium compounds|Semiconductor materials|Sesquioxides
随便看

　

开放百科全书收录14589846条英语、德语、日语等多语种百科知识，基本涵盖了大多数领域的百科知识，是一部内容自由、开放的电子版国际百科全书。

　

Copyright © 2023 OENC.NET All Rights Reserved
京ICP备2021023879号 更新时间：2024/11/13 13:23:21