| 词条 | EKV MOSFET model |
| 释义 |
The EKV Mosfet model is a mathematical model of metal-oxide semiconductor field-effect transistors (MOSFET) which is intended for circuit simulation and analog circuit design.[1] It was developed by C. C. Enz, F. Krummenacher and E. A. Vittoz (hence the initials EKV) around 1995 based in part on work they had done in the 1980s.[2] Unlike simpler models like the Quadratic Model, the EKV Model is accurate even when the MOSFET is operating in the subthreshold region (e.g. when Vbulk=Vsource then the MOSFET is subthreshold when Vgate-source < VThreshold). In addition, it models many of the specialized effects seen in submicrometre CMOS IC design. References1. ^{{Citation | last1=Enz | first1=C. C. | last2=Krummenacher | first2=F. | last3=Vittoz | first3=E.A. | author-link= | publication-date=July 1995 | date= | year=1995 | title=An Analytical MOS Transistor Model Valid in All Regions of Operation and Dedicated to Low-Voltage and Low-Current Applications | periodical=Analog Integrated Circuits and Signal Processing Journal on Low-Voltage and Low-Power Design | series= | publication-place= | place= | publisher= | volume=8 | issue= | pages=83–114 | url= | doi=10.1007/BF01239381 | oclc= | accessdate=}} 2. ^{{Citation | last1=Enz | first1=C. C. | last2=Krummenacher | first2=F. | last3=Vittoz | first3=E.A. | author-link= | publication-date=June 1987 | date= | year=1987 | title=A CMOS Chopper Amplifier | periodical=IEEE Journal of Solid-State Circuits | series= | publication-place= | place= | publisher= | volume=22 | issue=3 | pages=335–342 | url= | doi=10.1109/JSSC.1987.1052730 | oclc= | accessdate=}} See also
External links
2 : Transistor modeling|Electronic engineering |
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