“International Electron Devices Meeting”的意思、由来-开放百科全书

The IEEE International Electron Devices Meeting (IEDM) is an annual micro- and nanoelectronics conference held each December that serves as a forum for reporting technological breakthroughs in the areas of semiconductor and related device technologies, design, manufacturing, physics, modeling and circuit-device interaction.^[1]

The IEDM is where "Moore’s Law" got its name, as Gordon Moore first published his predictions in an article in Electronics Magazine in 1965. Ten years later he refined them in a talk at the IEDM, and from that point on people began referring to them as Moore's Law. Moore’s Law states that the complexity of integrated circuits would double approximately every two years.^[2]^[3]

IEDM brings together managers, engineers, and scientists from industry, academia, and government around the world to discuss nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nanoscale devices using emerging phenomena, optoelectronics, power, energy harvesting, and ultra-high-speed devices, as well as process technology and device modeling and simulation. The conference also encompasses discussions and presentations on devices in silicon, compound and organic semiconductors, and emerging material systems.^[4] In addition to technical paper presentations, IEDM includes multiple plenary presentations, panel sessions, tutorials, short courses, and invited talks and an entrepreneurship panel session conducted by experts in the field from around the globe.

The 64th annual IEDM will be held at the Hilton San Francisco Union Square hotel December 1–5, 2018.

Sponsor

The International Electron Devices Meeting is sponsored by the Electron Devices Society of the Institute of Electrical and Electronics Engineers (IEEE).

History

The First Annual Technical Meeting on Electron Devices (renamed the International Electron Devices Meeting in the mid-1960s) took place on October 24–25, 1955 at the Shoreham Hotel in Washington D.C. with approximately 700 scientists and engineers in attendance. At that time, the seven-year-old transistor and the electron tube reigned as the predominant electron-device technology. Fifty-four papers were presented on the then state-of-the-art in electron device technology, the majority of them from four U.S. companies -- Bell Telephone Laboratories, RCA Corporation, Hughes Aircraft Co. and Sylvania Electric Products. The need for an electron devices meeting was driven by two factors: commercial opportunities in the fast-growing new "solid-state" branch of electronics, and the U.S. government's desire for solid-state components and better microwave tubes for aerospace and defense.^[5]

IEDM 2017

The 2017 IEEE International Devices Meeting took place at the Hilton San Francisco Union Square from December 2–6, 2017. Highlights included Nobel Prize winner Hiroshi Amano speaking on ‘Transformative Electronics’, AMD President & CEO Lisa Su speaking on multi-chip technologies for high-performance computing; and Intel and Globalfoundries detailing their competing new FinFET technology platforms. Also, IBM’s Dan Edelstein gave a retrospective on copper interconnect. Copper interconnect (i.e., the wiring on computer chips) revolutionized the industry 20 years ago.^[6]

IEDM 2016

The 2016 IEEE International Devices Meeting took place at the Hilton San Francisco Union Square from December 3–7, 2016. The 2016 edition of the IEDM emphasized the following topics:^[7] advanced transistors,^[8] new memory technologies,^[9] brain-inspired computing,^[10] bioelectronics,^[11] and power electronics.^[12]

IEDM 2015

The 2015 International Electron Devices Meeting took place at the Washington Hilton Hotel from December 5–9, 2015. The major topics^[13]^[14] included ultra-small transistors,^[15] advanced memories,^[16] low-power devices for mobile & Internet of Things (IoT) applications, ^[17] alternatives to silicon transistors,^[18] and 3D integrated circuit (IC) technology.^[19] There were also a broad range of papers addressing some of the fastest-growing specialized areas in micro/nanoelectronics, including silicon photonics,^[20] physically flexible circuits,^[21] and brain-inspired computing.^[22]

IEDM 2014

The 2014 International Electron Devices Meeting took place at the Hilton San Francisco Union Square from December 15–17, 2014. The 2014 edition of the IEDM emphasized 14 nm FinFET transistor processes,^[23] power electronics,^[24] bio-sensors and MEMS/NEMS technologies for medical applications,^[25] new memory devices,^[26] display and sensor technologies,^[27] and 3D device architectures.^[28]

References

1. ^{{cite news | first = Nicolas | last = Mokhoff | title = Start of a beautiful friendship | date = 18 Dec 2006 | publisher = UBM Tech | url = http://www.eetimes.com/electronics-news/4067782/Start-of-a-beautiful-friendship | work = EE Times | accessdate = 2013-04-25}}
2. ^{{cite web|url=http://www.computerhistory.org/semiconductor/timeline/1965-Moore.html |title=1965: "Moore's Law" Predicts the Future of Integrated Circuits | The Silicon Engine | Computer History Museum |publisher=Computerhistory.org |date= |accessdate=2017-03-11}}
3. ^{{cite web|url=http://www.newelectronics.co.uk/electronics-technology/the-economics-of-chip-manufacture-on-advanced-technologies/35562/ |title=The economics of chip manufacture on advanced technologies |publisher=Newelectronics.co.uk |date=2011-07-26 |accessdate=2017-03-11}}
4. ^{{cite news | first = Gail | last = Purvis | title = IEDM, where the device is king | date = 15 Nov 2012 | url = http://www.powersystemsdesign.com/iedm-where-the-device-is-king?a=1&c=1151 | work = Power Systems Design | accessdate = 2013-04-25 | deadurl = yes | archiveurl = https://web.archive.org/web/20130606220511/http://www.powersystemsdesign.com/iedm-where-the-device-is-king?a=1&c=1151 | archivedate = 2013-06-06 | df = }}
5. ^{{cite journal | title = A production model K-band backward wave oscillator | journal = IRE Transactions on Electron Devices | date = April 1956 | first = A.W. | last = McEwan | volume = 3 | issue = 2 | page = 108 | doi = 10.1109/T-ED.1956.14115 | url = http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=1472034&url=http%3A%2F%2Fieeexplore.ieee.org%2Fiel5%2F16%2F31547%2F01472034 | accessdate = 2013-04-25}}
6. ^"Copper Interconnects" IBM 100 Icons of Progress
7. ^"5 Takeaways From IEDM" (December 15, 2016), Mark Lapedus, Semiconductor Engineering
8. ^[https://www.semiwiki.com/forum/content/6477-iedm-2016-7nm-shootout.html "IEDM 2016 - 7nm Shootout"] (January 17, 2016), Scotten Jones, SemiWiki.com
9. ^"How It’s Built: Micron/Intel 3D NAND" (February 1, 2016), Bryon Moyer, EE Journal
10. ^[https://www.eetimes.com/author.asp?section_id=36&doc_id=1331105&page_number=1 "RRAM/PCM-Based Brain-Gates Emerge as New Components"] (February 28, 2017), Ron Neale, EE Times
11. ^[https://spectrum.ieee.org/nanoclast/semiconductors/nanotechnology/graphene-temporary-tattoo "Graphene Temporary Tattoo Tracks Vital Signs"] (January 11, 2017) by Katherine Bourzac, IEEE Spectrum
12. ^"System-Level Impact of WBG Power Devices at 2016 IEDM" (October 26, 2016), PowerPulse.net
13. ^{{cite web|author=Paul McLellan |url=http://community.cadence.com/cadence_blogs_8/b/breakfast-bytes/archive/2015/12/11/iedm2015 |title=IEDM: the International Electron Devices Meeting - Breakfast Bytes - Cadence Blogs - Cadence Community |publisher=Community.cadence.com |date=2015-12-11 |accessdate=2017-03-11}}
14. ^{{cite web|author=by sdavis |url=http://electroiq.com/chipworks_real_chips_blog/2015/12/02/a-look-ahead-at-iedm-2015/ |title=A Look Ahead at IEDM 2015 | Siliconica |publisher=Electroiq.com |date=2015-12-02 |accessdate=2017-03-11}}
15. ^{{cite web|last=Stevenson |first=Richard |url=http://spectrum.ieee.org/semiconductors/devices/nanowire-transistors-could-let-you-talk-text-and-tweet-longer |title=Nanowire Transistors Could Let You Talk, Text, and Tweet Longer - IEEE Spectrum |publisher=Spectrum.ieee.org |date=2016-01-26 |accessdate=2017-03-11}}
16. ^{{cite web|author=Tetsuo Nozawa |url=http://techon.nikkeibp.co.jp/atclen/news_en/15mk/122400270/ |title=Samsung: DRAM Can Be Scaled Down to 10nm - Nikkei Technology Online |publisher=Techon.nikkeibp.co.jp |date=2015-12-24 |accessdate=2017-03-11}}
17. ^{{cite web|author=02:55 PM |url=https://www.semiwiki.com/forum/content/5301-iedm-blogs-%C2%96-part-3-%C2%96-global-foundries-22fdx-briefing.html |title=IEDM Blogs – Part 3 – Global Foundries 22FDX Briefing |publisher=SemiWiki.com |date= |accessdate=2017-03-11}}
18. ^{{cite web|author=Ashok Bindra |url=http://electronics360.globalspec.com/article/6286/iedm-divulges-advances-in-wide-bandgap-devices |title=IEDM Divulges Advances in Wide Bandgap Devices | Electronics360 |publisher=Electronics360.globalspec.com |date= |accessdate=2017-03-11}}
19. ^{{cite web|last=Turley |first=Jim |url=http://www.eejournal.com/archives/articles/20160201-micron/ |title=How It’s Built: Micron/Intel 3D NAND |publisher=Eejournal.com |date=2016-02-01 |accessdate=2017-03-11}}
20. ^{{cite web|url=http://www.laserfocusworld.com/articles/2015/11/germanium-tin-laser-for-silicon-photonics-is-cmos-compatible.html|title=Germanium-tin laser for silicon photonics is CMOS compatible|author=|date=|work=laserfocusworld.com|accessdate=11 March 2017}}
21. ^{{cite web|url=http://eecatalog.com/chipdesign/2016/02/09/2015-iedm-slide-11-rf-cmos-circuits-on-flexible-application-specific-substrates/ |title=2015 IEDM Slide 11: RF CMOS Circuits on Flexible, Application-Specific Substrates | Chip Design |publisher=Eecatalog.com |date=2016-02-09 |accessdate=2017-03-11}}
22. ^{{cite web|url=http://www.eetimes.com/author.asp?section_id=36&doc_id=1328557 |title=IEDM 2015 NV Memory and Brain Functions |publisher=EE Times |date= |accessdate=2017-03-11}}
23. ^{{cite web|url=http://semimd.com/blog/2015/01/05/solid-doping-for-bulk-finfets/ |title=Solid Doping for Bulk FinFETs | Semiconductor Manufacturing & Design Community |publisher=Semimd.com |date=2015-01-05 |accessdate=2017-03-11}}
24. ^{{cite web|url=http://www.smartgridelectronics.net/2015/01/sic-projected-significant-impact-industrial-markets/|title=Safe and High-Quality Electronic Products -- Smart Grid Electronics|author=|date=|work=smartgridelectronics.net|accessdate=11 March 2017}}
25. ^{{cite web|url=http://www.mdtmag.com/blogs/2014/12/innovative-technologies-dna-diagnostics-and-health-monitoring |title=Innovative Technologies for DNA Diagnostics and Health Monitoring |publisher=Mdtmag.com |date= |accessdate=2017-03-11}}
26. ^{{cite web|last=Morris |first=Kevin |url=http://eejournal.com/blog/tram-and-pcm-at-iedm/ |title=TRAM and PCM at IEDM |publisher=EE Journal |date=2015-02-11 |accessdate=2017-03-11}}
27. ^{{cite web|url=http://mandetech.com/2015/01/19/cmos-processing-advances-imaging/ |title=CMOS processing advances imaging : Media & Entertainment Technology |publisher=Mandetech.com |date=2015-01-19 |accessdate=2017-03-11}}
28. ^{{cite web|url=http://www.3dincites.com/2015/01/iedm-2014-3d-short-course-highlights-3d-memory-cubes-system-design/ |title=IEDM 2014 3D Shortcourse highlights Importance of 3D Memory Cubes |publisher=3D InCites |date=2015-01-05 |accessdate=2017-03-11}}