| 词条 | Aluminium nitride |
| 释义 |
| Watchedfields = changed | verifiedrevid = 446888761 | Name = Aluminium nitride | ImageFile = Aluminium Nitride.jpg | ImageName = Aluminium Nitride powder | ImageFile1 = Wurtzite polyhedra.png | OtherNames = Aluminium nitride | Reference = [1] |Section1={{Chembox Identifiers | ChemSpiderID_Ref = {{chemspidercite|correct|chemspider}} | ChemSpiderID = 81668 | InChI = 1/Al.N/rAlN/c1-2 | ChEBI_Ref = {{ebicite|correct|EBI}} | ChEBI = 50884 | SMILES = [AlH2-]1[N+]47[AlH-]2[N+][AlH-]3[N+]8([AlH2-][NH+]([AlH2-]4)[AlH2-]6)[AlH-]4[N+][AlH-]5[N+]6([AlH2-]6)[Al-]78[N+]78[AlH-]([NH+]69)[NH+]5[AlH2-][NH+]4[AlH-]7[NH+]3[AlH2-][NH+]2[AlH-]8[NH+]1[AlH2-]9 | SMILES1 = [AlH2-]1[NH+]([AlH2-]6)[AlH2-][NH+]7[AlH-]2[N+][Al-]3([N+][AlH-]9[N+]5)[N+]18[Al-]45[N+][AlH-]5[NH+]6[Al-]78[N+]78[AlH2-][NH+]5[AlH2-][N+]4([AlH2-][NH+]9[AlH2-]4)[AlH-]7[N+]34[AlH2-][NH+]2[AlH2-]8 | InChIKey = PIGFYZPCRLYGLF-PXKYIXAJAH | StdInChI_Ref = {{stdinchicite|correct|chemspider}} | StdInChI = 1S/Al.N | StdInChIKey_Ref = {{stdinchicite|correct|chemspider}} | StdInChIKey = PIGFYZPCRLYGLF-UHFFFAOYSA-N | CASNo = 24304-00-5 | CASNo_Ref = {{cascite|correct|CAS}} | PubChem = 90455 | EINECS = 246-140-8 | RTECS = BD1055000 |Section2={{Chembox Properties | Formula = | Al=1 | N=1 | MolarMass = 40.9882 g/mol | Appearance = white to pale-yellow solid | Density = 3.260 g/cm3 | MeltingPtC = 2200 | MeltingPt_notes = | BoilingPtC = 2517 | BoilingPt_notes = decomposes | SublimationConditions = | Solubility = hydrolyses (powder), insoluble (monocrystalline) | SolubleOther = insoluble, subject of hydrolysis in water solutions of bases and acids [2] | SolubilityProduct = | SolubilityProductAs = | Solvent = | pKa = | pKb = | IsoelectricPt = | LambdaMax = | Absorbance = | BandGap = 6.015 eV [3] (direct) | ElectronMobility = ~300 cm2/(V·s) | SpecRotation = | MagSus = | ThermalConductivity = 285 W/(m·K) | RefractIndex = 1.9–2.2 | Viscosity = | Dipole = |Section3={{Chembox Structure | MolShape = | CrystalStruct = Wurtzite | SpaceGroup = C6v4-P63mc | Coordination = Tetrahedral | Dipole = |Section4={{Chembox Thermochemistry | DeltaHf = -318.0 kJ/mol | DeltaGf = -287.0 kJ/mol | Entropy = 20.14 J/mol K | HeatCapacity = 30.10 J/mol K |Section7={{Chembox Hazards | NFPA-H = 1 | NFPA-F = 0 | NFPA-R = 0 }} Aluminium nitride (AlN) is a nitride of aluminium. Its wurtzite phase (w-AlN) is a wide band gap (6.01-6.05 eV at room temperature) semiconductor material, giving it potential application for deep ultraviolet optoelectronics. HistoryAlN was first synthesized in 1877, but it was not until the middle of the 1980s that its potential for application in microelectronics was realized{{Failed verification|date=May 2016}} due to its high thermal conductivity, especially for an electrically insulating ceramic (70–210 W·m−1·K−1 for polycrystalline material, and as high as 285 W·m−1·K−1 for single crystals).[4] Stability and chemical propertiesAluminium nitride is stable at high temperatures in inert atmospheres and melts about 2200 °C. In a vacuum, AlN decomposes at ~1800 °C. In the air, surface oxidation occurs above 700 °C, and even at room temperature, surface oxide layers of 5-10 nm have been detected. This oxide layer protects the material up to 1370 °C. Above this temperature bulk oxidation occurs. Aluminium nitride is stable in hydrogen and carbon dioxide atmospheres up to 980 °C.[5] The material dissolves slowly in mineral acids through grain boundary attack, and in strong alkalies through attack on the aluminium nitride grains. The material hydrolyzes slowly in water. Aluminium nitride is resistant to attack from most molten salts, including chlorides and cryolite. {{citation needed|date=March 2016}} Aluminum nitride can be patterned with a Cl2-based reactive ion etch.[6][7] ManufactureAlN is synthesized by the carbothermal reduction of aluminium oxide in the presence of gaseous nitrogen or ammonia or by direct nitridation of aluminium. The use of sintering aids, such as Y2O3 or CaO, and hot pressing is required to produce a dense technical grade material. ApplicationsEpitaxially grown thin film crystalline aluminium nitride is used for surface acoustic wave sensors (SAWs) deposited on silicon wafers because of AlN's piezoelectric properties. One application is an RF filter which is widely used in mobile phones,[8] which is called a thin film bulk acoustic resonator (FBAR). This is a MEMS device that uses aluminium nitride sandwiched between two metal layers.[9]Aluminium nitride is also used to build piezoelectric micromachined ultrasound transducers, which emit and receive ultrasound and which can be used for in-air rangefinding over distances of up to a meter.[10][11] Metallization methods are available to allow AlN to be used in electronics applications similar to those of alumina and beryllium oxide. AlN nanotubes as inorganic quasi-one-dimensional nanotubes, which are isoelectronic with carbon nanotubes, have been suggested as chemical sensors for toxic gases.[12][13] Currently there is much research into developing light-emitting diodes to operate in the ultraviolet using gallium nitride based semiconductors and, using the alloy aluminium gallium nitride, wavelengths as short as 250 nm have been achieved. In May 2006, an inefficient AlN LED emission at 210 nm was reported.[14] There are also multiple research efforts in industry and academia to use aluminum nitride in piezoelectric MEMS applications. These include resonators, gyroscopes and microphones.[15][16] Among the applications of AlN are
See also
References1. ^{{cite web | url = http://accuratus.com/alumni.html | title = Aluminium Nitride | publisher = Accuratus | accessdate = 2014-01-01 }} 2. ^{{cite journal | title = Hydrolysis behavior of aluminum nitride in various solutions | last1 = Fukumoto | first1 = S. | last2 = Hookabe | first2 = T. | last3 = Tsubakino | first3 = H. | year = 2010 | journal = J. Mat. Science | volume = 35 | issue = 11 | page = 2743–2748 | doi=10.1023/A:1004718329003}} 3. ^{{cite journal | last1 = Feneberg | first1 = M. | last2 = Leute | first2 = R. A. R. | last3 = Neuschl | first3 = B. | last4 = Thonke | first4 = K. | last5 = Bickermann | first5 = M. | year = 2010 | title =none | url = | journal = Phys. Rev. B | volume = 82 | issue = 7| page = 075208 | doi=10.1103/physrevb.82.075208}} 4. ^{{cite web | url = http://www.ioffe.rssi.ru/SVA/NSM/Semicond/AlN/index.html | work = Ioffe Database | title = AlN - Aluminium Nitride | publisher = FTI im. A. F. Ioffe, RAN | location = Sankt-Peterburg | accessdate = 2014-01-01 }} 5. ^{{cite book | author = L. I. Berger | title = Semiconductor Materials | publisher = CRC Press | year = 1997 | isbn = 978-0-8493-8912-2 | pages = 123–124 | url = https://books.google.com/books?id=Ty5Ymlg_Mh0C&pg=PA123 | accessdate = 2014-01-01 }} 6. ^{{cite journal|last1=Chih-ming Lin|last2=Ting-ta Yen|last3=Yun-ju Lai|last4=Felmetsger|first4=V.V.|last5=Hopcroft|first5=M.A.|last6=Kuypers|first6=J.H.|last7=Pisano|first7=A.P.|title=Temperature-compensated aluminum nitride lamb wave resonators|journal=IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control|date=March 2010|volume=57|issue=3|pages=524–532|doi=10.1109/TUFFC.2010.1443|pmid=20211766}} 7. ^{{cite journal|last1=Xiong|first1=Chi|last2=Pernice|first2=Wolfram H. P.|last3=Sun|first3=Xiankai|last4=Schuck|first4=Carsten|last5=Fong|first5=King Y.|last6=Tang|first6=Hong X.|title=Aluminum nitride as a new material for chip-scale optomechanics and nonlinear optics|journal=New Journal of Physics|date=2012|volume=14|issue=9|pages=095014|doi=10.1088/1367-2630/14/9/095014|language=en|issn=1367-2630|bibcode=2012NJPh...14i5014X|arxiv=1210.0975}} 8. ^{{cite web | url=http://news.investors.com/technology/031714-693520-aapl-drives-avgo-fbar-filter-shipments.htm?ven=rss | title = Apple, Samsung Cellphone Filter Orders Lift Avago}} 9. ^{{cite web | url=http://www.en-genius.net/site/zones/wirelessZONE/product_reviews/hfp_052702 | title = ACPF-7001: Agilent Technologies Announces FBAR Filter for U.S. PCS Band Mobile Phones and Data Cards | work = wirelessZONE | publisher = EN-Genius Network Ltd. | date = 2002-05-27 | accessdate = 2008-10-18 }} 10. ^{{cite web | url=http://www.technologyreview.com/news/520841/a-gestural-interface-for-smart-watches/ | title = A Gestural Interface for Smart Watches}} 11. ^{{cite conference| first = R.| last = Przybyla| first2 = et| last2 = al| title = 3D Ultrasonic Gesture Recognition| booktitle = International Solid State Circuits Conference| place = San Francisco| pages = 210–211| url = https://www.researchgate.net/publication/260991545_3D_Ultrasonic_Gesture_Recognition| year = 2014}} 12. ^ {{cite journal | last1 = Ahmadi | first1 = A | last2 = Hadipour | first2 = NL | last3 = Kamfiroozi | first3 = M | last4 = Bagheri | first4 = Z | year = 2012 | title = Theoretical study of aluminium nitride nanotubes for chemical sensing of formaldehyde | url = | journal = Sensors and Actuators B: Chemical | volume = 161 | issue = 1| pages = 1025–1029 | doi = 10.1016/j.snb.2011.12.001 }} 13. ^ {{cite journal | last1 = Ahmadi Peyghan | first1 = A | last2 = Omidvar | first2 = A | last3 = Hadipour | first3 = NL | last4 = Bagheri | first4 = Z | last5 = Kamfiroozi | first5 = M | year = 2012 | title = Can aluminum nitride nanotubes detect the toxic NH3 molecules? | url = | journal = Physica E | volume = 44 | issue = 7–8| pages = 1357–1360 | doi=10.1016/j.physe.2012.02.018}} 14. ^{{cite journal | author = Y. Taniyasu | title = An Aluminium Nitride Light-Emitting Diode with a Wavelength of 210 Nanometres | journal = Nature | volume = 441 | year = 2006 | url = http://physicsworld.com/cws/article/news/2006/may/17/leds-move-into-the-ultraviolet | doi = 10.1038/nature04760 | pmid = 16710416 | issue = 7091 | pages = 325–328 |display-authors=etal| bibcode = 2006Natur.441..325T }} 15. ^http://www.sand9.com {{webarchive|url=https://web.archive.org/web/20111104193402/http://www.sand9.com/ |date=2011-11-04 }} 16. ^{{Cite web | url=http://www.vespermems.com | title=Home}} External links
6 : Nitrides|Aluminium compounds|Piezoelectric materials|III-V semiconductors|Light-emitting diode materials|III-V compounds |
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